Dielectric Layer Research Articles

Investigating the inhibition of short channel effects using different materials of gate insulator layers in FinFET

Investigating the inhibition of short channel effects using different materials of gate insulator layers in FinFET

Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices.

Diamond has become a promising candidate for high-power devices based on its ultrawide bandgap and excellent thermoelectric properties, where an appropriate gate dielectric has been a bottleneck hindering the development of diamond devices. Herein, we have systematically investigated the structural arrangement and electronic properties of diamond/high-κ oxide (HfO2, ZrO2) heterojunctions by first-principles calculations with a SiO2 interlayer. Charge analysis reveals that the C-Si bonding interface attracts a large amount of charge concentrated at the diamond interface, indicating the potential for the formation of a 2D hole gas (2DHG). The diamond/HfO2 and diamond/ZrO2 heterostructures exhibit similar "Type II" band alignments with VBOs of 2.47 and 2.21 eV, respectively, which is consistent with experimental predictions. The introduction of a SiO2 dielectric layer into the diamond/SiO2/high-κ stacks exhibits the typical "Type I″ straddling band offsets (BOs). In addition, the wide bandgap SiO2 interlayer keeps the valence band maximum (VBM) and conduction band minimum (CBM) in the stacks away from those of diamond, effectively confining the electrons and holes in MOS devices. This work exhibits the potential of SiO2/high-κ oxide gate dielectrics for diamond devices and provides theoretical insights into the rational design of high-quality gate dielectrics for diamond-based MOS device applications.

Sound insulation performance of different built-in acoustic materials for new multifamily residential

ABSTRACT The Building Technical Regulations in Taiwan, Article 46–6, Section 1. require that the impact sound insulation performance △LW be greater than 17 dB. Although the regulation has been in effect for over 2.5 years, installations of qualified acoustic materials have not yet been found in the market, as they are not required to be listed for building permit applications until 2021. Owing to the slow increase in new home construction, sound insulation mats are estimated to take five to seven years to be widely adopted. To characterize the material performance, the built-in permanent sound insulation layers of various materials were tested in an unfinished residential building. Practical experiments were conducted as per the CNS 15160-7:2021standard on the 7th floor of new buildings in northern Taiwan. Eleven insulation materials were selected from different manufacturers. The insulation mats made from these materials were placed in the same environment of approximately 10 M2, then incorporated underneath the mortar substrate of the polished floor tile using the wet construction method; the 6th floor of the building was utilized to evaluate sound reduction in accordance with the CNS 8465–2:2019 standard for different materials.

Dielectric Elastomer Actuators with Enhanced Durability by Introducing a Reservoir Layer

A Dielectric Elastomer Actuator (DEA) consists of electrodes with a dielectric layer between them. By controlling the design of the electrodes, voltage, and frequency, the operating range and speed of the DEA can be adjusted. These DEAs find applications in biomimetic robots, artificial muscles, and similar fields. When voltage is applied to the DEA, the dielectric layer undergoes compression and expansion due to electrostatic forces, which can lead to electrical breakdown. This phenomenon is closely related to the performance and lifespan of the DEA. To enhance stability and improve dielectric properties, a DEA Reservoir layer is introduced. Here, stability refers to the ability of the DEA to perform its functions even as the applied voltage increases. The Reservoir layer delays electrical breakdown and enhances stability due to its enhanced thickness. The proposed DEA in this paper is composed of a Reservoir layer and electrode layer. The Reservoir layer is placed between the electrode layers and is independently configured, not subjected to applied voltage like the electrode layers. The performance of the DEA was evaluated by varying the number of polymer layers in the Reservoir and electrode designs. Introducing the Reservoir layer improved the dielectric properties of the DEA and delayed electrical breakdown. Increasing the dielectric constant through the DEA Reservoir can enhance output characteristics in response to electrical signals. This approach can be utilized in various applications in wearable devices, artificial muscles, and other fields.

Design and analysis of K and Ku-band wide-angle polarization-insensitive dual-band perfect metamaterial absorber

Abstract This paper presents a wide-angle polarization-insensitive dual-band metamaterial perfect absorber applied to the Ku and K bands. The proposed dual-band metamaterial absorber (MMA) is a three-layer structure of metal-dielectric-metal. The top metal layer consists of a split circle ring, two intersecting square rings, and a circle ring, the bottom metal layers is made of copper, and the middle dielectric layer is made of FR-4. The simulation results show that the MMA has two absorption peaks at frequencies of 12.06GHz and 19.07GHz, with absorption rates of 99.95% and 99.73%, respectively. The MMA exhibits good polarization insensitivity and wide-angle absorption performance in TE and TM modes. Further research was conducted on the absorption principle of MMA, and the specific impact of top cavity geometric parameters on the absorption rate was analyzed. The experimental results show that the absorption rate at 11.64GHz is 99.98% and the absorption rate at 17.98GHz is 99.26%. This is similar to the calculated results. The proposed dual-band MMA can be applied in related fields such as radar antennas, satellite communication, and sensing.

Ultra-thin wideband frequency tunable metamaterial absorber and its application for antenna radar cross section reduction

Abstract A metamaterial absorber (MMA) with broadband and efficient absorption performance based on ultra-thin dielectric layer is proposed. In this unique configuration, the absorption frequency of the MMA can be continuously and dynamically tuned across a wide frequency range by manipulating the reverse voltage of the central varactor diode. From both the equivalent circuit and field distribution perspectives, we analyze the mechanisms behind broadband tuning and superior absorption. Simulation and experimental results demonstrate that the absorption peak of MMA can be continuously tuned over a range of 5.16-8.16 GHz, with the absorption rate consistently exceeding 90%, and the thickness is only 0.5 mm. Integrating MMA array with a microstrip patch antenna in a suitable manner can dynamically mitigates the radar cross section (RCS) within the associated frequency range, with virtually negligible impact on the antenna's radiation performance.

Enhancing ferroelectricity in HfAlOx-based ferroelectric tunnel junctions: A comparative study of MFS and MFIS structures with ultrathin interfacial layers

This study explores the potential advantages of metal–ferroelectric–insulator–semiconductor (MFIS) structures compared with established metal–ferroelectric–semiconductor (MFS) and metal–ferroelectric–metal structures in the context of nonvolatile memory devices. Despite the superior performance of MFS structures in terms of electric field maintenance, switching speed, and power consumption, the presence of interface-related issues between the ferroelectric material and the semiconductor may degrade device performance. We propose an MFIS structure incorporating ultrathin interfacial layers (ILs) of SiO2, HfO2, and ZrO2 to address these issues. These insulator layers enhance device endurance by reducing physical stress and trap density at the interface, thereby improving electrical performance and long-term stability. Moreover, the presence of an IL reduces charge leakage between the ferroelectric layer and semiconductor, contributing to the resolution of the sneak path current problem. An additional feature of MFIS devices is their self-rectifying behavior, simplifying circuit design and manufacturing processes by eliminating the need for an external rectification circuit, consequently reducing costs. Through a series of experiments, this study evaluates the performance of the MFIS structure, investigates the ferroelectric properties of HfAlOx-based FTJs, and examines the conduction mechanism of the MFIS structure. By comparing the o-phase of MFS, SiO2, HfO2, and ZrO2 devices via grazing incidence X-ray diffraction (GIXRD) and using the positive-up-negative-down method to extract polarization and coercive voltage, we provide a comprehensive investigation of the impact of ultrathin ILs on ferroelectric properties. This research aims to offer valuable insights into the advancement of memory device technologies, presenting the MFIS structure as a promising platform for next-generation memory technologies. Further sections will elaborate on the experimental setup, methodology, and detailed study findings.

Electrical Strength of Layered Insulation Systems in Liquid Nitrogen for Resistive Superconducting Fault Current Limiters

Electrical Strength of Layered Insulation Systems in Liquid Nitrogen for Resistive Superconducting Fault Current Limiters

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Resistive random access memory (RRAM) holds great promise for in-memory computing, which is considered the most promising strategy for solving the von Neumann bottleneck. However, there are still significant problems in its application due to the non-uniform performance of RRAM devices. In this work, a bilayer dielectric layer memristor was designed based on the difference in the Gibbs free energy of the oxide. We fabricated Au/Ta2O5/HfO2/Ta/Pt (S3) devices with excellent uniformity. Compared with Au/HfO2/Pt (S1) and Au/Ta2O5/Pt (S2) devices, the S3 device has a low reset voltage fluctuation of 2.44%, and the resistive coefficients of variation are 13.12% and 3.84% in HRS and LRS, respectively, over 200 cycles. Otherwise, the bilayer device has better linearity and more conductance states in multi-state regulation. At the same time, we analyze the physical mechanism of the bilayer device and provide a physical model of ion migration. This work provides a new idea for designing and fabricating resistive devices with stable performance.

Structural performance of CFRP-confined RC columns under earthquake-induced fire

This paper presents numerical investigations into the performance and risk of a reinforced concrete column confined with carbon fiber reinforced polymer (CFRP) sheets alongside an insulation layer when subjected to earthquake-induced fire. For a comparative assessment, the response of an unconfined control column is predicted as well. A five-story benchmark building is selected and the likelihood of fire ignition is simulated under 50 ground motions. Afterward, employing stochastic approaches, the moment capacity and uncertainty of the unconfined and confined columns (C0 and CONF, respectively) are computed within a thermal exposure period of 3 h. The maximum acceleration of 0.28 g obtained from the benchmark building frame indicates the possible occurrence of a fire without significant structural damage. The thermal distress lowers the median capacity of the C0 and CONF columns by 19% and 5%, respectively, and remarkably raises the uncertainty of C0, which differs from the case of CONF. Parametric studies reveal that, during the 3-hour fire loading, the functionality of the columns is dominated by the compressive strength of concrete and a prominent enhancement is noticed for the confined column in terms of preserving functionality against its unconfined counterpart. The insulation layer plays a crucial role in controlling the efficacy of the CFRP system. As far as reliability and hazard are concerned, the CONF column outperforms the C0 column.

Giant Goos–Hanchen shift with heigh reflection base on guided mode resonance in trapezoidal hBN/dielectric metasurface

Abstract hBN is a natural hyperbolic van der Waals material that can enhance light-matter interactions. In this work, the maximum Goos-Hanchen(GH) shift has a magnitude of -4680μm with high reflection using the central beam method in the trapezoidal dielectric/hBN grating (TDG) metasurface (MS) where the beam waist w≧ λ. Analysis of the electromagnetic field distribution indicated that the amplified GH shift was a result of guided mode resonances excited in the waveguide dielectric layer. The frequency and magnitude of GH shifts can be effectively controlled by adjusting the height of the trapezoidal hBN, as well as by manipulating the widths of the top and bottom dielectric layers, the period of the TDG structure, and the height of the multi-layered structure. Moreover, an evaluation of the structure-sensing properties based on the GH shift was conducted. The enhanced and controllable GH shift exhibited by the TDG MS presents promising prospects for applications in optical sensors, optical switches, and optoelectronic detectors.

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

AbstractIn this work, a conventional HfO2 gate dielectric layer is replaced with a 3-nm ferroelectric (Fe) HZO layer in the gate stacks of advanced fin field-effect transistors (FinFETs). Fe-induced characteristics, e.g., negative drain induced barrier lowering (N-DIBL) and negative differential resistance (NDR), are clearly observed for both p- and n-type HZO-based FinFETs. These characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide (HZO) film, caused by Al doping from the TiAlC capping layer. This mechanism is verified for capacitors with structures similar to the FinFETs. Owing to the enhanced ferroelectricity and N-DIBL phenomenon, the drain current (IDS) of the HZO-FinFETs is greater than that of HfO2-FinFETs and obtained at a lower operating voltage. Accordingly, circuits based on HZO-FinFET achieve higher performance than those based on HfO2-FinFET at a low voltage drain (VDD), which indicates the application feasibility of the HZO-FinFETs in the ultra-low power integrated circuits. Graphical abstract

Printed Electronics by Plasma Spraying: Case Study for High Temperature Sensors

AbstractTemperature sensors are critical components in many industrial and research applications, particularly in harsh environments where high temperatures, corrosion and mechanical stress are prevalent. In this paper, we investigate the use of plasma spray technique as a versatile and simple method to print multipoint thermocouples and resistance temperature detectors (RTDs) based on NiCr-NiAl coatings on steel and ceramic substrates using stencil masking and laser scribing. The thickness of alumina the dielectric layer was optimized using metal-insulator-metal test. The thermoelectric properties of the printed thermocouples were investigated up to 1000 °C. The thermal independency of printed thermocouples and the capability of multilocation measurement at the surface on the same substrate was demonstrated. The thermoelectric properties of the printed RTD were investigated up to 850 °C. The electrical resistance of the RTD sensor is linear with the temperature variation from room temperature to 500 °C. The oxidation effect of the printed sensor metallic layers at high temperature was investigated and discussed.

Hierarchical PVDF/ZnO/Ag/ZIF-8 nanofiber membrane used in trace-level Raman detection of H2S

surface enhanced Raman scattering (SERS) detection of gases has always been difficult due to the low affinity and poor Raman cross section of the moving molecules. To mitigate the impact of these problems on detection of gases, a structure of zinc oxide/silver nanowires coated with zeolitic imidazolate framework-8 (ZnO NWs/Ag/ZIF-8) was constructed on polyvinylidene fluoride (PVDF) nanofiber membrane (PVDF/ZnO NWs/Ag/ZIF-8) and in detail researched in this work. Benefitting from the quadruple synergistic effect of efficient Knudsen diffusion of gas molecules inside ZIF-8, enrichment of ZIF-8 microsponges for gaseous molecules, regulation of ZIF-8 dielectric layer for light and reverse light scattering of ZnO NW/Ag tip, the structure was proven to have precise co-confinement on both hot spots and gaseous molecules. As a result, this PVDF/ZnO NWs/Ag/ZIF-8 achieved excellent detection for hydrogen sulfide (H2S), with a limit of detection of 1 × 10−10 v/v and the minimum relative standard deviation value of ca. 7.13 %. Furthermore, as a proof of concept, in practical application, we designed and assembled our substrate (3.5 cm × 3.5 cm) into a SERS face mask and realized efficient monitoring of H2S in human’s exhaled breath.

Co-hydrolysis of TEOS and DDS to obtain a modified hydrophobic SiO2 insulation layer for FeSiBC amorphous magnetic powder core with low energy loss

The hysteresis effect and eddy currents caused by alternating magnetic fields greatly impede the improvement of the working efficiency and performance stability of soft magnetic powder cores. In this work, modified hydrophobic SiO2 nanoparticles were prepared by tetraethyl orthosilicate (TEOS) and dimethyl-diethoxy-silane (DDS) as co-precursors through sol–gel methods. The effect of different proportions of DDS and TEOS on the amorphous magnetic powder cores performance was studied. It was demonstrated that the insulation layer in DDS and TEOS co-precursors hydrolyzed composite powders exhibited more uniform distribution compared with TEOS hydrolyzed alone counterpart. The introduction of methyl groups reduced the accumulation of hydrolysis intermediates on the surface of FeSiBC powders. Furthermore, the addition of DDS reduced eddy current loss significantly with a low hysteresis loss. The total energy loss of the DDS and TEOS co-hydrolysis powder core were reduced by 16.1 % and 7.7 % at 1 MHz, 0.05 T compared to the uncoated powder core and the TEOS hydrolysis alone counterpart, respectively. The presented results provide insights into improving the application range and energy utilization efficiency for the magnetic powder cores.

Revealing the mechanism of pack ceiling failure induced by thermal runaway in NCM batteries: A coupled multiphase fluid-structure interaction model for electric vehicles

Structure failure of lithium-ion battery (LIB) pack ceiling leads to the unintended release of combustible and poisonous substances during thermal runaway (TR), resulting in personnel injuries and financial losses. However, limited research has been conducted on the mechanism behind pack ceiling failures. In this study, we developed a coupled multiphase fluid-structure interaction (FSI) model to simulate the evolution of up-cover baffle under the TR impact of a 52 Ah NCM battery. Our findings reveal several important insights:1) the maximum force and temperature on the baffle are 13.01 N and 598.5 °C in experiment; 2) the simulation shows that particles exert higher temperature and greater force on the baffle compared to the gas phase; 3) the overall equivalent stress in the stainless-steel baffle surpasses the tensile strength that incurs crack on the baffles. According to the validated model, we find that the baffle structure failure is caused by the thermal stress from particle-structure heat conduction. Furthermore, this observation is applicable to the structure failure problems associated to the thermal runaway of high-density battery that involves enormous particles. In addition, the insulation layer is found to be more effective than the gap distance in protecting the pack ceiling. These findings offer a valuable insight into the structure design of LIB pack, and provide the guidance toward future battery integration technologies.

Improving Microstructural Homogeneity of Investment‐Cast Single‐Crystalline Ni‐Base Superalloys by Using Fluidized Carbon Bed Cooling

One impeding factor for faster solidification in typical investment casting processes is the limited heat removal capability. This study compares the classical Bridgman technique and the fluidized carbon bed cooling (FCBC) casting method. In particular, the influence of the thermal design is investigated in terms of microstructural and compositional homogeneity in single‐crystalline CMSX‐4. These investment casting processes mainly differ in the baffle type used to insulate the hot and cold zones inside of the casting vessel. While the Bridgman process is based on radiation cooling, the FCBC casting process relies on a dynamic baffle made of expanded graphite that is buoyant on fluidized bed of glassy carbon beads. Such a dynamic insulation layer can adapt to the cross‐sectional variation of ceramic shell molds and provide a better thermal insulation, which results in more uniform solidification conditions. This enables a reduction in the primary dendrite arm spacing by up to 26%, an increase in the homogeneity of the microstructure and composition, as well as a reduction in overall porosity and mean pore size of 41%.

Energy efficiency analysis of applying phase change materials and thermal insulation layers in a building

Nowadays, there is a continuous increase in global energy demand, due to population growth and economic activities. One of the crucial concerns is that buildings contribute to almost 40% of the world's energy usage and greenhouse gas emissions. Enhancing the building envelope by integrating thermal insulation layers (TILs), phase change materials (PCMs), or a combination of both is a promising method to enhance energy efficiency and reduce the peak energy loads in buildings. The current research utilizes simulations to reduce the heat transfer of external wall construction, with a focus on three distinct strategies. The first strategy focuses on the effect of various materials and the arrangement of TILs, while the second strategy analyzes the consequences of different materials and the positioning of PCMs. The third strategy explores the synergistic effects of integrating TILs with PCMs to enhance the thermal efficiency of the standard residential building models, following the recommendations outlined in the NIST Technical Note 1765. The strategies were tested by evaluating the heating and cooling energy loads of a building in Kansas City throughout the year. The results show that the maximum thermal energy savings that may be achieved by applying the first, second, and third strategies in the building of external walls are 16.4%, 33.02%, and 37.88%, respectively. The corresponding cooling energy savings for the three strategies are as follows: 9.64%, 55.48%, and 26.749%.

Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory

Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.

Thermal protection properties of profiled timber with peat-vermiculite insulation

Today, the use of environmentally friendly materials is becoming increasingly important. The construction of energy-saving buildings with enclosing structures made of insulated profiled timber, is one of the most promising areas in low-rise construction.Materials having minimum negative impact on the environment during their operation, include new construction insulation materials based on peat-vermiculite granules. The paper studies the main physical properties of wooden exterior walls made of profiled timber, in which peat vermiculite is used as insulation, thermal conductivity of which ranges from 0.05 to 0.06 W/(m·K). For this purpose, numerical simulation is performed for the heat-mass transfer in wooden enclosing structures made of insulated timber with three different connector options.The temperature and heat flow distributions are obtained as a result of modeling stationary thermal conductivity processes in timber structures. It is shown that plywood connectors do not affect the thickness temperature distribution in wooden walls with peat-vermiculite insulation. An increase in thermal conductivity of insulation has no significant effect on the temperature difference along the connector axis or outside the region of its temperature influence.It is found that the thickness of the peat-vermiculite insulation layer should be at least 0.176 m to ensure the compliance with the main requirements for thermal protection properties of enclosing structures in the climatic conditions of Tomsk. The greatest heat loss with a minimum insulation thickness is observed for the wall made of profiled insulated timber with T-shaped connectors. A high-strength timber with the additional central lamella has the best thermal protection with the lowest insulation thickness.